PNP Bipolar Junction Transistor (BJT) in SOT-32 package. Features a maximum collector current of 1.5A and a collector-emitter voltage (VCEO) of 60V. Offers a maximum power dissipation of 1.25W and a collector-emitter saturation voltage of 500mV. Operates across a wide temperature range from -65°C to 150°C. Through-hole mount design with tin contact plating.
PackageSOT-32
MountingThrough Hole
PolarityPNP
Power1.25W
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Technical Specifications
Stmicroelectronics BD138 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
-60V
Contact Plating
Tin
Emitter Base Voltage (VEBO)
5V
Height
10.8mm
hFE Min
25
Length
7.8mm
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.25W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
1.25W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD138 Datasheet
Download the complete datasheet for Stmicroelectronics BD138 to view detailed technical specifications.
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