NPN silicon transistor in a SOT-32 package. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 80V. Offers a minimum hFE of 63 and a collector-emitter saturation voltage of 500mV. Operates across a temperature range of -65°C to 150°C with a maximum power dissipation of 1.25W. Through-hole mount design with tin, matte contact plating.
PackageSOT-32
MountingThrough Hole
PolarityNPN
Power1.25W
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Technical Specifications
Stmicroelectronics BD139-10 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Height
10.8mm
hFE Min
63
Length
7.8mm
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.25W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
1.25W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD139-10 Datasheet
Download the complete datasheet for Stmicroelectronics BD139-10 to view detailed technical specifications.
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