
NPN bipolar junction transistor in a SOT-32 package, featuring a 2A continuous collector current and 80V collector-emitter breakdown voltage. This through-hole mounted component offers a maximum power dissipation of 25W and a transition frequency of 3MHz. It operates within a temperature range of -65°C to 150°C and boasts a minimum DC current gain (hFE) of 40. Compliant with RoHS standards, this transistor is designed for general-purpose amplification and switching applications.
Stmicroelectronics BD237 technical specifications.
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 10.8mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 7.8mm |
| Max Collector Current | 2A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
| Width | 2.7mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BD237 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
