
PNP Silicon Power Transistor, TO-126 package, featuring 80V Collector-Emitter Breakdown Voltage and 2A Max Collector Current. Offers 100V Collector-Base Voltage, 80V Collector-Emitter Voltage, and a 3MHz Gain Bandwidth Product. With 25W Max Power Dissipation and a minimum hFE of 40, this RoHS compliant component is designed for through-hole mounting.
Stmicroelectronics BD238 technical specifications.
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -600mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 10.8mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 7.8mm |
| Max Collector Current | 2A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Width | 2.7mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BD238 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
