PNP Silicon Power Transistor, TO-126 package, featuring 80V Collector-Emitter Breakdown Voltage and 2A Max Collector Current. Offers 100V Collector-Base Voltage, 80V Collector-Emitter Voltage, and a 3MHz Gain Bandwidth Product. With 25W Max Power Dissipation and a minimum hFE of 40, this RoHS compliant component is designed for through-hole mounting.
Frequency3MHz
PackageSOT-32
Current Rating-2A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics BD238 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
-600mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin
Current Rating
-2A
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
Height
10.8mm
hFE Min
40
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
2A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
25W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
25W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
-100V
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD238 Datasheet
Download the complete datasheet for Stmicroelectronics BD238 to view detailed technical specifications.
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