PNP Bipolar Junction Transistor (BJT) in SOT-32 package, designed for medium power applications. Features a maximum collector current of 4A and a power dissipation of 36W. Offers a collector-emitter voltage (VCEO) of 22V and a transition frequency of 3MHz. Minimum DC current gain (hFE) is 40. Operates across a wide temperature range from -65°C to 150°C.
Frequency3MHz
PackageSOT-32
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics BD434 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
22V
Collector Emitter Breakdown Voltage
22V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
22V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
hFE Min
40
Max Collector Current
4A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
36W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
36W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD434 Datasheet
Download the complete datasheet for Stmicroelectronics BD434 to view detailed technical specifications.
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