PNP Bipolar Junction Transistor (BJT) in a SOT-32 through-hole package. Features a maximum collector current of 4A and a collector-emitter breakdown voltage of 32V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. Maximum power dissipation is 36W, with an operating temperature range from -65°C to 150°C.
Frequency3MHz
PackageSOT-32
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics BD436 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
32V
Collector Emitter Breakdown Voltage
32V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
32V
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
hFE Min
40
Max Collector Current
4A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
36W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
36W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
BD436
Transition Frequency
3MHz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD436 Datasheet
Download the complete datasheet for Stmicroelectronics BD436 to view detailed technical specifications.
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