NPN bipolar junction transistor (BJT) in a SOT-32 package, featuring a 45V collector-emitter voltage (VCEO) and a maximum collector current of 4A. This through-hole mounted component offers a minimum gain (hFE) of 30 and a transition frequency of 3MHz. It operates within a temperature range of -65°C to 150°C and has a power dissipation of 36W.
Frequency3MHz
PackageSOT-32
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BD437 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
Height
10.8mm
hFE Min
30
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
4A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
36W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
36W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD437 Datasheet
Download the complete datasheet for Stmicroelectronics BD437 to view detailed technical specifications.
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