PNP Bipolar Junction Transistor (BJT) designed for power applications. Features a maximum collector current of 4A and a maximum power dissipation of 36W. Offers a collector-emitter breakdown voltage of 45V and a saturation voltage of 200mV. Operates across a wide temperature range from -65°C to 150°C. Packaged in a SOT-32 case with through-hole mounting. RoHS compliant and lead-free.
Frequency3MHz
PackageSOT-32
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics BD438 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
Height
10.8mm
hFE Min
30
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
4A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
36W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
36W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD438 Datasheet
Download the complete datasheet for Stmicroelectronics BD438 to view detailed technical specifications.
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