
The BD439 is a NPN transistor with a maximum collector current of 4A and a maximum operating temperature of 150°C. It is packaged in a RoHS compliant SOT-32 package and is suitable for use in applications where a high current and high frequency are required. The transistor has a collector base voltage of 60V and a collector emitter breakdown voltage of 60V. It is not radiation hardened and is not SVHC compliant.
Stmicroelectronics BD439 technical specifications.
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Max Collector Current | 4A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 36W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BD439 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
