PNP Silicon Power Transistor, TO-126 package, featuring 80V Collector-Emitter Voltage (VCEO) and 4A Max Collector Current. This through-hole mount component offers 36W Power Dissipation and a maximum operating frequency of 3MHz. With a Collector-Emitter Saturation Voltage of 800mV and Emitter-Base Voltage (VEBO) of 5V, it operates within a temperature range of -65°C to 150°C. The RoHS compliant package includes Tin, Matte contact plating.
Frequency3MHz
PackageSOT-32
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics BD442 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
800mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
800mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Height
10.8mm
Length
7.8mm
Max Collector Current
4A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
36W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
36W
Radiation Hardening
No
RoHS Compliant
Yes
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD442 Datasheet
Download the complete datasheet for Stmicroelectronics BD442 to view detailed technical specifications.
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