PNP Silicon Power Transistor, TO-126 package, featuring 80V Collector-Emitter Voltage (VCEO) and 4A Max Collector Current. This through-hole mount component offers 36W Power Dissipation and a maximum operating frequency of 3MHz. With a Collector-Emitter Saturation Voltage of 800mV and Emitter-Base Voltage (VEBO) of 5V, it operates within a temperature range of -65°C to 150°C. The RoHS compliant package includes Tin, Matte contact plating.
Frequency3MHz
PackageSOT-32
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics BD442 technical specifications.
General
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 800mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Height | 10.8mm |
| Length | 7.8mm |
| Max Collector Current | 4A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 36W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 2.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BD442 Datasheet
Download the complete datasheet for Stmicroelectronics BD442 to view detailed technical specifications.
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