NPN bipolar junction transistor (BJT) in a TO-220 package, featuring a maximum collector current of 8A and a collector-emitter breakdown voltage of 80V. This through-hole mounted component offers a maximum power dissipation of 50W and an operating temperature range from -65°C to 150°C. It boasts a minimum DC current gain (hFE) of 15 and a gain bandwidth product of 12MHz. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating8A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BD537 technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
800mV
Current Rating
8A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
12MHz
hFE Min
15
Lead Free
Lead Free
Max Collector Current
8A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
50W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
50W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
BD537
Termination
Through Hole
DC Rated Voltage
80V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD537 Datasheet
Download the complete datasheet for Stmicroelectronics BD537 to view detailed technical specifications.
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