PNP Darlington bipolar junction transistor (BJT) with a 60V collector-emitter breakdown voltage and a maximum collector current of 4A. Features a low collector-emitter saturation voltage of 2.5V and a minimum DC current gain (hFE) of 750. Housed in a 3-pin SOT-32 package with through-hole mounting and a maximum power dissipation of 40W. Operates across a wide temperature range from -65°C to 150°C. RoHS compliant with tin-matte contact plating.
PackageSOT-32
Current Rating-4A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics BD678 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
2.5V
Contact Plating
Tin, Matte
Current Rating
-4A
Emitter Base Voltage (VEBO)
5V
Height
11.05mm
hFE Min
750
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
4A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
40W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
-60V
Width
2.9mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD678 Datasheet
Download the complete datasheet for Stmicroelectronics BD678 to view detailed technical specifications.
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