NPN Silicon Power Transistor, TO-220-3 package, featuring a 100V Collector-Emitter Voltage (VCEO) and a maximum collector current of 12A. This through-hole mounted component offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. With a maximum power dissipation of 75W and an operating temperature range from -65°C to 150°C, it is suitable for demanding applications. RoHS compliant.
Frequency3MHz
PackageTO-220-3
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Stmicroelectronics BD711 technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1V
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
3MHz
Height
9.15mm
hFE Min
40
Length
10.4mm
Max Collector Current
12A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
75W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD711 Datasheet
Download the complete datasheet for Stmicroelectronics BD711 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
