NPN Silicon Power Transistor, TO-220-3 package, featuring a 100V Collector-Emitter Voltage (VCEO) and a maximum collector current of 12A. This through-hole mounted component offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. With a maximum power dissipation of 75W and an operating temperature range from -65°C to 150°C, it is suitable for demanding applications. RoHS compliant.
Frequency3MHz
PackageTO-220-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BD711 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| Height | 9.15mm |
| hFE Min | 40 |
| Length | 10.4mm |
| Max Collector Current | 12A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BD711 Datasheet
Download the complete datasheet for Stmicroelectronics BD711 to view detailed technical specifications.
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