PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector current of 15A and a collector-emitter voltage of 80V. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 90W. Packaged in a TO-220 through-hole mount. RoHS compliant.
Frequency3MHz
PackageTO-220
MountingThrough Hole
PolarityPNP
Quick Jump:
Technical Specifications
Stmicroelectronics BD910 technical specifications.
General
Package/Case
TO-220
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
3V
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
hFE Min
40
Max Collector Current
15A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
90W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
90W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD910 Datasheet
Download the complete datasheet for Stmicroelectronics BD910 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
