PNP Bipolar Junction Transistor (BJT) for power applications. Features a 100V collector-emitter breakdown voltage and a maximum collector current of 15A. Operates with a 3MHz transition frequency and offers a minimum DC current gain (hFE) of 15. Packaged in a TO-220-3 through-hole mount with tin plating. This RoHS compliant component has a maximum power dissipation of 90W and an operating temperature range of -65°C to 150°C.
Frequency3MHz
PackageTO-220-3
Current Rating-15A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics BD912 technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
3V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
3V
Contact Plating
Tin
Current Rating
-15A
Emitter Base Voltage (VEBO)
5V
Frequency
3MHz
Gain Bandwidth Product
3MHz
Height
9.15mm
hFE Min
15
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
15A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
90W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
90W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
DC Rated Voltage
-100V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BD912 Datasheet
Download the complete datasheet for Stmicroelectronics BD912 to view detailed technical specifications.
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