
NPN bipolar junction transistor in a TO-247 package, featuring a 100V collector-emitter breakdown voltage and a 15A maximum collector current. This through-hole mount device offers a minimum hFE of 100 and a maximum power dissipation of 130W. It operates within a temperature range of -65°C to 150°C and has a collector-emitter saturation voltage of 2.5V. The component is RoHS compliant with tin contact plating.
Stmicroelectronics BDW83C technical specifications.
| Package/Case | TO-247 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 4V |
| Contact Plating | Tin |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 20.15mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BDW83C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
