NPN bipolar junction transistor in TO-39 package, featuring a 300V collector-emitter breakdown voltage and 100mA maximum collector current. Offers a 90MHz transition frequency and a minimum hFE of 25. Operates within a temperature range of -55°C to 200°C, with a maximum power dissipation of 5W. Through-hole mounting design.
Frequency90MHz
PackageTO-39
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BF259 technical specifications.
General
Package/Case
TO-39
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
1V
Emitter Base Voltage (VEBO)
5V
Frequency
90MHz
Gain Bandwidth Product
90MHz
Height
6.6mm
hFE Min
25
Lead Free
Lead Free
Length
9.4mm
Max Collector Current
100mA
Max Frequency
90MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Through Hole
Number of Elements
1
Package Quantity
500
Packaging
Bulk
Polarity
NPN
Power Dissipation
5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Transition Frequency
90MHz
Width
9.4mm
Compliance
RoHS
Not CompliantNo
Datasheet
Stmicroelectronics BF259 Datasheet
Download the complete datasheet for Stmicroelectronics BF259 to view detailed technical specifications.
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