PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V collector-emitter breakdown voltage and a 500mA maximum collector current. Operates with a transition frequency of 60MHz and a minimum hFE of 50. Packaged in a TO-92 through-hole mount, this RoHS compliant component offers a power dissipation of 830mW and operates from -65°C to 150°C.
Frequency60MHz
PackageTO-92
Current Rating-500mA
MountingThrough Hole
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Technical Specifications
Stmicroelectronics BF421-AP technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 60MHz |
| Gain Bandwidth Product | 60MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 830mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 830mW |
| RoHS Compliant | Yes |
| Transition Frequency | 60MHz |
| DC Rated Voltage | -300V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BF421-AP Datasheet
Download the complete datasheet for Stmicroelectronics BF421-AP to view detailed technical specifications.
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