NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and a 5A maximum collector current. Operates within a temperature range of -65°C to 200°C, with a 100MHz transition frequency. Housed in a TO-39 metal package with 3 leads, suitable for through-hole mounting. RoHS compliant with tin, matte contact plating.
PackageTO-39
Current Rating5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BFX34 technical specifications.
General
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Matte |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Height | 6.6mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 9.4mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 870mW |
| Mount | Through Hole |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 120V |
| Width | 9.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BFX34 Datasheet
Download the complete datasheet for Stmicroelectronics BFX34 to view detailed technical specifications.
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