The BFY51 is a general-purpose NPN transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 150mA. It is packaged in a TO-5 case and is designed for through-hole mounting. The transistor has a gain bandwidth product of 50MHz and a transition frequency of 110MHz. It is not radiation hardened and is not compliant with RoHS or SVHC regulations.
PackageTO-5
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BFY51 technical specifications.
General
| Package/Case | TO-5 |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 350mV |
| Collector-emitter Voltage-Max | 30V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Max Collector Current | 150mA |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | BFY51 |
| Transition Frequency | 110MHz |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics BFY51 Datasheet
Download the complete datasheet for Stmicroelectronics BFY51 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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