The BU508AF is a high-power NPN bipolar junction transistor with a collector-emitter breakdown voltage of 700V and a maximum collector current of 8A. It is designed for use in high-power applications and has a maximum power dissipation of 50W. The transistor is packaged in a through-hole package and is compliant with RoHS regulations. It has an operating temperature range of -65°C to 150°C.
MountingThrough Hole
PolarityNPN
Power50W
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Technical Specifications
Stmicroelectronics BU508AF technical specifications.
General
| Collector Base Voltage (VCBO) | 9V |
| Collector Emitter Breakdown Voltage | 700V |
| Collector Emitter Voltage (VCEO) | 700V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 9V |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BU508AF Datasheet
Download the complete datasheet for Stmicroelectronics BU508AF to view detailed technical specifications.
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