NPN bipolar junction transistor (BJT) in a TO-220 package, designed for through-hole mounting. Features a 400V collector-emitter breakdown voltage and a continuous collector current rating of 7A. Offers a maximum power dissipation of 75W and operates within a temperature range of -65°C to 150°C. This RoHS compliant component has a collector-emitter saturation voltage of 2V.
PackageTO-220-3
Current Rating7A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BU810 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 600V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Continuous Collector Current | 7A |
| Current Rating | 7A |
| Emitter Base Voltage (VEBO) | 5V |
| Lead Free | Lead Free |
| Max Collector Current | 7A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BU810 Datasheet
Download the complete datasheet for Stmicroelectronics BU810 to view detailed technical specifications.
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