NPN bipolar junction transistor (BJT) in a TO-220 package, designed for through-hole mounting. Features a 400V collector-emitter breakdown voltage and a continuous collector current rating of 7A. Offers a maximum power dissipation of 75W and operates within a temperature range of -65°C to 150°C. This RoHS compliant component has a collector-emitter saturation voltage of 2V.
PackageTO-220-3
Current Rating7A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BU810 technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
600V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
400V
Collector-emitter Voltage-Max
3V
Continuous Collector Current
7A
Current Rating
7A
Emitter Base Voltage (VEBO)
5V
Lead Free
Lead Free
Max Collector Current
7A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
75W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
75W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
400V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics BU810 Datasheet
Download the complete datasheet for Stmicroelectronics BU810 to view detailed technical specifications.
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