The BUL213 is a TO-220-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 3A. It has a maximum power dissipation of 60W and operates over a temperature range of -65°C to 150°C. The transistor is RoHS compliant and available in a package quantity of 1000 units.
PackageTO-220-3
Current Rating3A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BUL213 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.3kV |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 900mV |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 16 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BUL213 Datasheet
Download the complete datasheet for Stmicroelectronics BUL213 to view detailed technical specifications.
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