
High voltage, fast-switching NPN power transistor in a TO-220 package. Features 800V collector-emitter breakdown voltage and 4A continuous collector current. Offers a maximum collector-emitter saturation voltage of 1V and a minimum hFE of 12. Designed for through-hole mounting with tin contact plating and RoHS compliance. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 90W.
Stmicroelectronics BUL216 technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 1.6kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 3V |
| Contact Plating | Tin |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 9.15mm |
| hFE Min | 12 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 9W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BUL216 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
