NPN bipolar junction power transistor featuring a 500V collector-emitter breakdown voltage and a 5A maximum collector current. This silicon transistor offers a 1.1V collector-emitter saturation voltage and a 1kV collector-base voltage. Packaged in a TO-220 through-hole mount, it supports a maximum power dissipation of 75W and operates within a temperature range of -65°C to 150°C. RoHS compliant and lead-free.
PackageTO-220
Current Rating5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BUL310 technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 1kV |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 500V |
| Collector-emitter Voltage-Max | 1.1V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 9.15mm |
| hFE Min | 6 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BUL310 Datasheet
Download the complete datasheet for Stmicroelectronics BUL310 to view detailed technical specifications.
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