
High voltage, fast-switching NPN bipolar junction transistor (BJT) designed for power applications. Features a 450V collector-emitter breakdown voltage and a 4A maximum collector current. Offers a low collector-emitter saturation voltage of 1.1V and a 70W maximum power dissipation. Packaged in a TO-220-3 through-hole mount with tin plating, this RoHS compliant component operates from -65°C to 150°C.
Stmicroelectronics BUL39D technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 850V |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 1.1V |
| Contact Plating | Tin |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 9.15mm |
| hFE Min | 4 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | 500V Transistors |
| DC Rated Voltage | 450V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BUL39D to view detailed technical specifications.
No datasheet is available for this part.
