High voltage, fast-switching NPN bipolar junction transistor (BJT) designed for power applications. Features a 450V collector-emitter breakdown voltage and a 5A maximum collector current. With a low collector-emitter saturation voltage of 1.2V and a maximum power dissipation of 80W, this through-hole component is housed in a TO-220-3 package with tin plating. Operating across a wide temperature range from -65°C to 150°C, it is RoHS compliant and lead-free.
PackageTO-220-3
Current Rating5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BUL49D technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 850V |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 1.2V |
| Contact Plating | Tin |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 9.15mm |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Breakdown Voltage | 450V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 450V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BUL49D Datasheet
Download the complete datasheet for Stmicroelectronics BUL49D to view detailed technical specifications.
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