NPN silicon power transistor featuring a 450V collector-emitter breakdown voltage and a 15A continuous collector current. This through-hole component offers a maximum power dissipation of 125W and a collector-emitter saturation voltage of 1V. It operates within a temperature range of -65°C to 150°C and is packaged in a TO-247 case. The device is RoHS compliant.
PackageTO-247
Current Rating15A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics BUL810 technical specifications.
General
| Package/Case | TO-247 |
| Collector Base Voltage (VCBO) | 1kV |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 5V |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 20.15mm |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 450V |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BUL810 Datasheet
Download the complete datasheet for Stmicroelectronics BUL810 to view detailed technical specifications.
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