PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 200V and a maximum DC collector current of 3A. Housed in a 3-pin SOT-32 (TO-126) plastic package with through-hole mounting. Offers a maximum power dissipation of 32000mW and operates within a temperature range of -65°C to 150°C. Minimum DC current gain is specified as 10 at 10mA/5V, 22 at 0.75A/5V, and 4 at 2A/5V.
Stmicroelectronics BULT3P3 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-126 |
| Package/Case | SOT-32 |
| Package Description | Small-Outline Transistor |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 7.8(Max) |
| Package Width (mm) | 2.7(Max) |
| Package Height (mm) | 10.8(Max) |
| Pin Pitch (mm) | 2.2 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 200V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 32000mW |
| Minimum DC Current Gain | 10@10mA@5V|[email protected]@5V|4@2A@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Stmicroelectronics BULT3P3 to view detailed technical specifications.
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