NPN Bipolar Junction Transistor (BJT) for high current applications. Features a 125V Collector-Emitter Voltage (VCEO) and a 50A Max Collector Current. Housed in a TO-3 package, this component offers a Max Power Dissipation of 250W and operates across a temperature range of -65°C to 200°C. Designed for chassis mount and through-hole applications, it is RoHS compliant.
Stmicroelectronics BUV20 technical specifications.
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 125V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 125V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | 50A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 8.92mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 39.3mm |
| Max Collector Current | 50A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250W |
| Mount | Chassis Mount, Through Hole |
| Number of Elements | 1 |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | BUV20 |
| Transition Frequency | 8MHz |
| DC Rated Voltage | 125V |
| Width | 26mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics BUV20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.