PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-257 package. Features 80V collector-emitter voltage and 5A continuous collector current. Offers a maximum power dissipation of 35000mW and a minimum DC current gain of 70 at 0.5A. Operating temperature range from -65°C to 200°C.
PackageTO-257
MountingThrough Hole
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Technical Specifications
Stmicroelectronics BUX78ESY technical specifications.
General
| Package Family Name | TO-257 |
| Package/Case | TO-257 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.67(Max) |
| Package Width (mm) | 5.08(Max) |
| Package Height (mm) | 10.92(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-257AA |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 5A |
| Maximum Power Dissipation | 35000mW |
| Minimum DC Current Gain | [email protected]@5V|50@2A@5V|30@5A@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | SCR76 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Stmicroelectronics BUX78ESY Datasheet
Download the complete datasheet for Stmicroelectronics BUX78ESY to view detailed technical specifications.
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