PNP Bipolar Junction Transistor (BJT) in a TO-220 package, designed for through-hole mounting. Features a maximum collector current of 10A and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 60 and a maximum power dissipation of 50W. Operates across a wide temperature range from -65°C to 150°C. RoHS compliant with tin contact plating.
PackageTO-220-3
Current Rating-10A
MountingThrough Hole
PolarityPNP, NPN
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Technical Specifications
Stmicroelectronics D45H5 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -5V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | -45V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Tin |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP, NPN |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -45V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics D45H5 Datasheet
Download the complete datasheet for Stmicroelectronics D45H5 to view detailed technical specifications.
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