PNP Bipolar Junction Transistor (BJT) in a TO-220 package, designed for through-hole mounting. Features a maximum collector current of 10A and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 60 and a maximum power dissipation of 50W. Operates across a wide temperature range from -65°C to 150°C. RoHS compliant with tin contact plating.
PackageTO-220-3
Current Rating-10A
MountingThrough Hole
PolarityPNP, NPN
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Technical Specifications
Stmicroelectronics D45H5 technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
-5V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-1V
Collector Emitter Voltage (VCEO)
-45V
Collector-emitter Voltage-Max
1V
Contact Plating
Tin
Current Rating
-10A
Emitter Base Voltage (VEBO)
-5V
hFE Min
60
Lead Free
Lead Free
Max Collector Current
10A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
50W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
PNP, NPN
Power Dissipation
50W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
-45V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics D45H5 Datasheet
Download the complete datasheet for Stmicroelectronics D45H5 to view detailed technical specifications.
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