The E-ULQ2003D1 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a continuous collector current of 500mA. It has a maximum power dissipation of 950mW and operates over a temperature range of -40°C to 105°C. The transistor is packaged in a SOIC package and is lead-free. It is a discrete semiconductor device with a single NPN channel.
PackageSOIC
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Stmicroelectronics E-ULQ2003D1 technical specifications.
General
| Package/Case | SOIC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Input Voltage | 30V |
| Max Operating Temperature | 105°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 600mA |
| Max Output Voltage | 50V |
| Mount | Surface Mount |
| Number of Channels | 7 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 950mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics E-ULQ2003D1 Datasheet
Download the complete datasheet for Stmicroelectronics E-ULQ2003D1 to view detailed technical specifications.
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