NPN bipolar junction transistor (BJT) designed for high-voltage applications, featuring an 800V collector-emitter breakdown voltage and a maximum collector current of 24A. This through-hole mounted power transistor offers a collector-emitter saturation voltage of 3V and a minimum hFE of 30. With a maximum power dissipation of 75W and an operating temperature range of -65°C to 150°C, it is suitable for demanding electronic circuits. The component is RoHS compliant and packaged in a rail/tube format.
Current Rating24A
MountingThrough Hole
PolarityNPN
Power75W
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Technical Specifications
Stmicroelectronics HD1750FX technical specifications.
General
Collector Emitter Breakdown Voltage
800V
Collector Emitter Saturation Voltage
3V
Collector Emitter Voltage (VCEO)
800V
Collector-emitter Voltage-Max
3V
Current Rating
24A
Emitter Base Voltage (VEBO)
10V
Height
26.7mm
hFE Min
30
Lead Free
Lead Free
Length
15.7mm
Max Collector Current
24A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
75W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
75W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
800V
Width
5.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics HD1750FX Datasheet
Download the complete datasheet for Stmicroelectronics HD1750FX to view detailed technical specifications.
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