NPN bipolar junction transistor (BJT) designed for high-voltage applications, featuring an 800V collector-emitter breakdown voltage and a maximum collector current of 24A. This through-hole mounted power transistor offers a collector-emitter saturation voltage of 3V and a minimum hFE of 30. With a maximum power dissipation of 75W and an operating temperature range of -65°C to 150°C, it is suitable for demanding electronic circuits. The component is RoHS compliant and packaged in a rail/tube format.
Current Rating24A
MountingThrough Hole
PolarityNPN
Power75W
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Technical Specifications
Stmicroelectronics HD1750FX technical specifications.
General
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 24A |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 26.7mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Collector Current | 24A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics HD1750FX Datasheet
Download the complete datasheet for Stmicroelectronics HD1750FX to view detailed technical specifications.
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