N-channel MOSFET, 100V drain-source breakdown voltage, 22A continuous drain current. Features 49mΩ drain-source resistance at 10V gate-source voltage, 870pF input capacitance, and 85W maximum power dissipation. Operates from -55°C to 175°C, with a 20V gate-source voltage rating. Packaged in a TO-220AB through-hole mount.
Stmicroelectronics IRF540 technical specifications.
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