N-channel MOSFET, 100V drain-source breakdown voltage, 22A continuous drain current. Features 49mΩ drain-source resistance at 10V gate-source voltage, 870pF input capacitance, and 85W maximum power dissipation. Operates from -55°C to 175°C, with a 20V gate-source voltage rating. Packaged in a TO-220AB through-hole mount.
Stmicroelectronics IRF540 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 22A |
| Current | 33A |
| Current Rating | 22A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 870pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 85W |
| Rds On Max | 77mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 50ns |
| Voltage | 100V |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics IRF540 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
