N-CHANNEL POWER MOSFET, TO-220AB package, featuring 250V drain-to-source breakdown voltage and 8A continuous drain current. Offers 450mΩ drain-to-source resistance (Rds On Max) and 80W maximum power dissipation. Includes 13ns turn-on delay and 16ns fall time, with 770pF input capacitance. Designed for through-hole mounting, this RoHS compliant component operates from -65°C to 150°C.
PackageTO-220AB
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics IRF634 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 770pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | MESH OVERLAY™ |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 250V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics IRF634 Datasheet
Download the complete datasheet for Stmicroelectronics IRF634 to view detailed technical specifications.
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