N-CHANNEL POWER MOSFET, TO-220AB package, featuring 250V drain-to-source breakdown voltage and 8A continuous drain current. Offers 450mΩ drain-to-source resistance (Rds On Max) and 80W maximum power dissipation. Includes 13ns turn-on delay and 16ns fall time, with 770pF input capacitance. Designed for through-hole mounting, this RoHS compliant component operates from -65°C to 150°C.
PackageTO-220AB
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics IRF634 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
250V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
770pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
80W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
80W
Radiation Hardening
No
Rds On Max
450mR
RoHS Compliant
Yes
Series
MESH OVERLAY™
Turn-On Delay Time
13ns
DC Rated Voltage
250V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics IRF634 Datasheet
Download the complete datasheet for Stmicroelectronics IRF634 to view detailed technical specifications.
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