Stmicroelectronics
IRF640ST4
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
PackageD2PAK
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics IRF640ST4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
180mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics IRF640ST4 Datasheet
Download the complete datasheet for Stmicroelectronics IRF640ST4 to view detailed technical specifications.
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