Stmicroelectronics
IRF640ST4
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
PackageD2PAK
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics IRF640ST4 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 180mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics IRF640ST4 Datasheet
Download the complete datasheet for Stmicroelectronics IRF640ST4 to view detailed technical specifications.
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