N-channel RF MOSFET transistor designed for high-frequency applications. Features a 65V drain-source voltage and 5A continuous drain current. Operates up to 1000 MHz with a typical power gain of 17.5 dB and 59W output power. Housed in a 3-pin PowerSO-10RF (formed lead) surface-mount plastic package with gull-wing leads. Wide operating temperature range from -65°C to 165°C.
PackagePowerSO-10RF (Formed lead)
MountingSurface Mount
Power59(Typ)W
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Technical Specifications
Stmicroelectronics LET9045 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
PowerSO-10RF (Formed lead)
Package/Case
PowerSO-10RF (Formed lead)
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
9.5
Package Width (mm)
9.4
Package Height (mm)
3.5
Package Material
Plastic
Mounting
Surface Mount
Channel Type
N
Configuration
Single
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage
65V
Maximum Continuous Drain Current
5A
Maximum Frequency
1000MHz
Maximum Power Dissipation
79000mW
Min Operating Temperature
-65°C
Max Operating Temperature
165°C
Typical Power Gain
17.5dB
Output Power
59(Typ)W
Typical Input Capacitance @ Vds
59@28VpF
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics LET9045 Datasheet
Download the complete datasheet for Stmicroelectronics LET9045 to view detailed technical specifications.
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