The MD2001FX is a high-power NPN transistor with a collector-emitter breakdown voltage of 700V and a maximum collector current of 12A. It has a gain bandwidth product of 64kHz and a minimum current gain of 4.5. The transistor is packaged in a through-hole configuration and is compliant with RoHS regulations. It has an operating temperature range of -65°C to 150°C and a maximum power dissipation of 58W.
MountingThrough Hole
PolarityNPN
Power58W
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Technical Specifications
Stmicroelectronics MD2001FX technical specifications.
General
| Collector Base Voltage (VCBO) | 9V |
| Collector Emitter Breakdown Voltage | 700V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 700V |
| Collector-emitter Voltage-Max | 1.8V |
| Emitter Base Voltage (VEBO) | 9V |
| Gain Bandwidth Product | 64kHz |
| hFE Min | 4.5 |
| Lead Free | Lead Free |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 58W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 58W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics MD2001FX Datasheet
Download the complete datasheet for Stmicroelectronics MD2001FX to view detailed technical specifications.
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