
High voltage NPN bipolar junction transistor (BJT) designed for standard definition CRT displays. Features a 700V collector-emitter breakdown voltage (VCEO) and a 1.5kV collector-base voltage (VCBO). Offers a maximum collector current of 14A and a maximum power dissipation of 62W. Operates within a temperature range of -65°C to 150°C and supports a maximum operating frequency of 64kHz. This through-hole mounted component is RoHS compliant and packaged in a rail/tube format.
Stmicroelectronics MD2310FX technical specifications.
| Collector Base Voltage (VCBO) | 1.5kV |
| Collector Emitter Breakdown Voltage | 700V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 700V |
| Collector-emitter Voltage-Max | 2.5V |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 26.7mm |
| hFE Min | 6 |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Collector Current | 14A |
| Max Frequency | 64kHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 62W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 62W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 5.7mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics MD2310FX to view detailed technical specifications.
No datasheet is available for this part.
