PNP Silicon Bipolar Junction Transistor (BJT) for power applications. Features 80V collector-emitter breakdown voltage and 10A continuous collector current. Designed for chassis mount with a TO-3 package, offering 150W maximum power dissipation. Operates across a wide temperature range from -65°C to 200°C. RoHS compliant with a minimum hFE of 1000.
PackageTO-3
Current Rating-10A
MountingChassis Mount, Through Hole
PolarityNPN, PNP
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Technical Specifications
Stmicroelectronics MJ2501 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 4V |
| Continuous Collector Current | 10A |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150W |
| Mount | Chassis Mount, Through Hole |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN, PNP |
| Power Dissipation | 150W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics MJ2501 Datasheet
Download the complete datasheet for Stmicroelectronics MJ2501 to view detailed technical specifications.
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