NPN bipolar junction transistor in a TO-3 package. Features a 100V collector-emitter breakdown voltage and a 16A continuous collector current. Offers a minimum DC current gain (hFE) of 1000 and a maximum collector-emitter saturation voltage of 2.5V. Designed for chassis mount and through-hole applications, with a maximum power dissipation of 150W. Operates across a temperature range of -65°C to 150°C.
PackageTO-3
Current Rating16A
MountingChassis Mount, Through Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics MJ4035 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 4V |
| Continuous Collector Current | 16A |
| Current Rating | 16A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150W |
| Mount | Chassis Mount, Through Hole |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 150W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics MJ4035 Datasheet
Download the complete datasheet for Stmicroelectronics MJ4035 to view detailed technical specifications.
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