PNP Bipolar Junction Transistor (BJT) for power applications. Features a 60V collector-emitter breakdown voltage and a 10A maximum collector current. This surface-mount device is housed in a TO-252 package, offering a 2MHz transition frequency and a maximum power dissipation of 20W. It operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency2MHz
PackageTO-252
Current Rating-10A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics MJD2955T4 technical specifications.
General
| Package/Case | TO-252 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 8V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 2MHz |
| Height | 2.4mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 10A |
| Max Frequency | 2MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP, NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 2MHz |
| DC Rated Voltage | -60V |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics MJD2955T4 Datasheet
Download the complete datasheet for Stmicroelectronics MJD2955T4 to view detailed technical specifications.
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