PNP Bipolar Junction Transistor (BJT) for power applications. Features a 300V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of 500mA. Housed in a DPAK surface-mount package, this transistor offers a maximum power dissipation of 15W and operates within a temperature range of -65°C to 150°C. It is RoHS compliant and lead-free.
PackageDPAK
Current Rating-500mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Stmicroelectronics MJD350T4 technical specifications.
General
Package/Case
DPAK
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
300V
Current Rating
-500mA
Emitter Base Voltage (VEBO)
3V
Height
2.4mm
hFE Min
30
Lead Free
Lead Free
Length
6.6mm
Max Breakdown Voltage
300V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
15W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
15W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
-300V
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics MJD350T4 Datasheet
Download the complete datasheet for Stmicroelectronics MJD350T4 to view detailed technical specifications.
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