PNP Bipolar Junction Transistor (BJT) for power applications. Features a 300V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of 500mA. Housed in a DPAK surface-mount package, this transistor offers a maximum power dissipation of 15W and operates within a temperature range of -65°C to 150°C. It is RoHS compliant and lead-free.
PackageDPAK
Current Rating-500mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Stmicroelectronics MJD350T4 technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 300V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 3V |
| Height | 2.4mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 15W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 15W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -300V |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics MJD350T4 Datasheet
Download the complete datasheet for Stmicroelectronics MJD350T4 to view detailed technical specifications.
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