NPN bipolar junction transistor (BJT) in a TO-220 package, designed for power applications. Features a maximum collector current of 10A and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 20 and a transition frequency of 2MHz. Maximum power dissipation is 75W, with operating temperatures ranging from -55°C to 150°C. Through-hole mounting and RoHS compliant.
Frequency2MHz
PackageTO-220
Current Rating10A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics MJE3055T technical specifications.
General
Package/Case
TO-220
Collector Base Voltage (VCBO)
70V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1.1V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
8V
Current Rating
10A
Emitter Base Voltage (VEBO)
5V
Frequency
2MHz
Gain Bandwidth Product
2MHz
Height
9.15mm
hFE Min
20
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
10A
Max Frequency
2MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
75W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
75W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
2MHz
DC Rated Voltage
60V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics MJE3055T Datasheet
Download the complete datasheet for Stmicroelectronics MJE3055T to view detailed technical specifications.
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