NPN bipolar junction transistor (BJT) in a TO-220 package, designed for power applications. Features a maximum collector current of 10A and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 20 and a transition frequency of 2MHz. Maximum power dissipation is 75W, with operating temperatures ranging from -55°C to 150°C. Through-hole mounting and RoHS compliant.
Frequency2MHz
PackageTO-220
Current Rating10A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics MJE3055T technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 8V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| Height | 9.15mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 10A |
| Max Frequency | 2MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | 60V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics MJE3055T Datasheet
Download the complete datasheet for Stmicroelectronics MJE3055T to view detailed technical specifications.
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