
3W LDMOS RF transistor for high-frequency applications, operating up to 500MHz with a maximum frequency of 1GHz. Features 17dB gain and 3W output power at a 12.5V test voltage. Designed for surface mount installation in a PowerSO-10RF plastic package, this N-channel device offers a 40V drain-to-source breakdown voltage and a continuous drain current of 2.5A. With a wide operating temperature range from -65°C to 165°C, it is RoHS compliant and lead-free.
Stmicroelectronics PD55003S-E technical specifications.
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Frequency | 500MHz |
| Gain | 17dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 3W |
| Max Power Dissipation | 31.7W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 3W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31.7W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 12.5V |
| Voltage Rating | 40V |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics PD55003S-E to view detailed technical specifications.
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