
The PD55003STR-E is a high-frequency N-CHANNEL RF transistor with a maximum operating temperature of 165°C and a minimum operating temperature of -65°C. It has a maximum drain to source breakdown voltage of 40V and a maximum drain to source voltage of 40V. The transistor is designed for surface mount applications and is packaged in a RoHS compliant plastic package. It has a maximum power dissipation of 31.7W and a maximum output power of 3W. The PD55003STR-E is RoHS compliant and suitable for use in high-frequency applications up to 1GHz.
Stmicroelectronics PD55003STR-E technical specifications.
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Frequency | 500MHz |
| Gain | 17dB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Frequency | 1GHz |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 3W |
| Max Power Dissipation | 31.7W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 3W |
| Package Quantity | 600 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 31.7W |
| RoHS Compliant | Yes |
| Test Voltage | 12.5V |
| Voltage Rating | 40V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics PD55003STR-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
