RF Power Transistor, N-CHANNEL LDMOS device delivering 8W maximum output power at 12.5V test voltage and 500MHz frequency. Features 40V drain to source breakdown voltage, 17dB gain, and a maximum operating frequency of 1GHz. Designed for surface mount applications with a PowerSO-10RF plastic package, operating from -65°C to 165°C. This RoHS compliant component offers 52.8W maximum power dissipation.
Frequency500MHz
Voltage Rating40V
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics PD55008S-E technical specifications.
General
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Frequency | 500MHz |
| Gain | 17dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 8W |
| Max Power Dissipation | 52.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 8W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 52.8W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 12.5V |
| Voltage Rating | 40V |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics PD55008S-E Datasheet
Download the complete datasheet for Stmicroelectronics PD55008S-E to view detailed technical specifications.
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