
2W LDMOS RF Transistor, N-CHANNEL, Surface Mount, PSO-10RF plastic package. Features 2W maximum output power, 15dB power gain, and 65V drain to source breakdown voltage. Operates from HF up to 1GHz, with a test voltage of 28V. Offers a wide operating temperature range of -65°C to 165°C. RoHS compliant and lead-free.
Stmicroelectronics PD57002-E technical specifications.
| Continuous Drain Current (ID) | 250mA |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 960MHz |
| Gain | 15dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 2W |
| Max Power Dissipation | 4.75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 2W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 4.75W |
| Power Gain | 15dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Technology | LDMOS |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics PD57002-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.