PD57002-E

2W 65V 1GHz LDMOS RF Transistor, N-CH, 15dB Gain

2W LDMOS RF Transistor, N-CHANNEL, Surface Mount, PSO-10RF plastic package. Features 2W maximum output power, 15dB power gain, and 65V drain to source breakdown voltage. Operates from HF up to 1GHz, with a test voltage of 28V. Offers a wide operating temperature range of -65°C to 165°C. RoHS compliant and lead-free.

Frequency960MHz

Voltage Rating65V

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Stmicroelectronics PD57002-E technical specifications.

General

Continuous Drain Current (ID)	250mA
Drain to Source Breakdown Voltage	65V
Drain to Source Voltage (Vdss)	65V
DS Breakdown Voltage-Min	65V
Frequency	960MHz
Gain	15dB
Gate to Source Voltage (Vgs)	20V
Lead Free	Lead Free
Max Frequency	1GHz
Max Operating Temperature	165°C
Min Operating Temperature	-65°C
Max Output Power	2W
Max Power Dissipation	4.75W
Mount	Surface Mount
Number of Elements	1
Output Power	2W
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	4.75W
Power Gain	15dB
Radiation Hardening	No
RoHS Compliant	Yes
Technology	LDMOS
Test Voltage	28V
Voltage Rating	65V
DC Rated Voltage	65V