STMICROELECTRONICS

PD57006-E

6W 65V 1GHz N-CH LDMOS RF Transistor, SOIC

Stmicroelectronics

PD57006-E

Name: PD57006-E Stmicroelectronics
Brand: Stmicroelectronics
SKU: PD57006-E

6W 65V 1GHz N-CH LDMOS RF Transistor, SOIC

6W LDMOS RF Transistor, operating up to 1 GHz, features 15dB power gain and 65V drain-to-source breakdown voltage. This N-channel transistor offers a maximum output power of 6W and a continuous drain current of 1A, with a maximum power dissipation of 20W. Packaged in a surface-mount SOIC (PSO-10RF) plastic package, it supports a wide operating temperature range from -65°C to 165°C.

Frequency945MHz

PackageSOIC

Voltage Rating65V

MountingSurface Mount

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Technical Specifications

Stmicroelectronics PD57006-E technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	1A
Drain to Source Breakdown Voltage	65V
Drain to Source Voltage (Vdss)	65V
DS Breakdown Voltage-Min	65V
Frequency	945MHz
Gain	15dB
Gate to Source Voltage (Vgs)	20V
Height	3.5mm
Input Capacitance	27pF
Lead Free	Lead Free
Length	7.5mm
Max Frequency	945MHz
Max Operating Temperature	165°C
Min Operating Temperature	-65°C
Max Output Power	6W
Max Power Dissipation	20W
Mount	Surface Mount
Number of Elements	1
Operating Frequency	1 GHz
Output Power	6W
Package Quantity	400
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	20W
Power Gain	15dB
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Test Voltage	28V
Voltage Rating	65V
Width	9.4mm